gsib2520n, gsib2540n, gsib2560n, gsib2580n www.vishay.com vishay general semiconductor revision: 26-jun-13 1 document number: 89389 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 single-phase single in-line bridge rectifiers features ? ul recognition file number e54214 ? thin single in-iine package ? glass passivated chip junction ? high surge current capability ? high case dielectric strength of 2500 v rms ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for switching power supply, home appliances, office equipment, industrial au tomation applications. mechanical data case: gsib-5s ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body mounting torque: 10 cm-kg (8.8 in-lbs) maximum recommended torque: 5.7 cm-kg (5 in-lbs) notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on pcb without heatsink primary characteristics package gsib-5s i f(av) 25 a v rrm 200 v, 400 v, 600 v, 800 v i fsm 350 a i r 10 a v f at i f = 12.5 a 1.0 v t j max. 150 c diode variations in-line case style gsib-5s ~ ~ ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gsib2520n gsib2540n gsib2560n gsib2580n unit maximum repetitive pe ak reverse voltage v rrm 200 400 600 800 v maximum rms voltage v rms 140 280 420 560 v maximum dc blocking voltage v dc 200 400 600 800 v maximum average forward rectified output current at t c = 98 c i f(av) (1) 25 a t a = 25 c i f(av) (2) 3.5 peak forward surge current single sine-wave ? superimposed on rated load i fsm 350 a rating for fusing (t < 8.3 ms) i 2 t 500 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
gsib2520n, gsib2540n, gsib2560n, gsib2580n www.vishay.com vishay general semiconductor revision: 26-jun-13 2 document number: 89389 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on pcb without heatsink (3) recommended mounting position is to bolt down on heatsi nk with silicone therma l compound for maximum he at transfer with #6 scre w ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve output rectified current fig. 2 - maximum non-repeti tive peak forward surge current per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol g sib2520n gsib2540n gsib2560n gsib2580n unit maximum instantaneous ? forward voltage drop per diode i f = 12.5 a v f 1.0 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c i r 10 a t a = 125 c 350 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gsib2520n gsib2540n gsib2560n gsib2580n unit maximum thermal resistance r ? ja (2) 22 c/w r ? jc (1) 1.0 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gsib2560n-m3/45 7.0 45 20 tube 0 15 20 75 50 25 0 100 125 150 10 5 25 30 heatsink mounting, t c pcb mounting, t a temperature (c) average forward output current (a) 0 50 100 150 200 300 350 400 1 100 10 number of cycles at 60 hz peak forward surge current (a) 1.0 cycle
gsib2520n, gsib2540n, gsib2560n, gsib2580n www.vishay.com vishay general semiconductor revision: 26-jun-13 3 document number: 89389 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.6 1.0 1.2 1.4 0.8 0.01 0.1 10 1 100 instantaneous forward voltage (v) instantaneous forward current (a) 60 40 20 0 100 80 0.1 1 100 10 1000 percent of rated peak reverse voltage (%) instantaneous reverse current (a) t a = 125 c t a = 25 c 10 1 100 1000 1 10 100 reverse voltage (v) junction capaci tance (pf) 10 1 0.1 0.1 10 1 0.01 t - heating time (s) transient thermal impedance (c/w) 2.5 0.2 2.2 0.2 1 0.1 10 0.2 7.5 0.2 4 0.2 5 20 0.3 17 . 5 0.5 11 0.2 2.7 0.2 3.5 0.2 3.2 0.2 0.7 0.1 4.6 0.2 3.6 0.2 + 7.5 0.2 30 0.3 case style gsib-5s
|
